March 2018: INTERSIL/RENESAS ships Space Industry’s First Radiation-Hardened 100V and 200V GaN FET and Low Side GaN FET Driver

Renesas Electronics Corporation announced the space industrys first low side Gallium Nitride (GaN) field effect transistor (FET) driver and GaN FETs that enable primary and secondary DC/DC converter power supplies in launch vehicles and satellites, as well as downhole drilling and high reliability industrial applications. These devices power ferrite switch drivers, motor control driver circuits, heater control modules, embedded command modules, 100V and 28V power conditioning, and redundancy switching systems.
The ISL7023SEH 100V, 60A GaN FET and ISL70024SEH 200V, 7.5A GaN FET use the base die manufactured by Efficient Power Conversion Corporation (EPC). The GaN FETs provide up to 10 orders of magnitude better performance than silicon MOSFETs while reducing package size by 50 percent. They also reduce power supply weight and achieve higher power efficiency with less switching power loss. At 5m٠(RDSON) and 14nC (QG), the ISL70023SEH enables the industrys best figure of merit (FOM). Both GaN FETs require less heat sinking due to reduced parasitic elements, and their ability to operate at high frequencies allows the use of smaller output filters, which achieve excellent efficiencies in a compact solution size. Manufactured using a MIL-PRF-38535 Class V-like flow, the ISL70023SEH and ISL70024SEH offer guaranteed electrical specifications over the military temperature range and lot-by-lot radiation assurance for high dose rate 100krad(Si) and low dose rate 75krad(Si).
The ISL70040SEH low side GaN FET driver powers the ISL7002xSEH GaN FETs with a regulated 4.5V gate drive voltage and splits the outputs to adjust FET turn-on and turn-off speeds. Operating with a supply voltage of 4.5V to 13.2V, the FET driver provides high current source and sink capability for high frequency operation, while offering both inverting and non-inverting gate drive to provide flexibility in power supply designs. Its fail-safe protection on the logic inputs eliminates unintentional switching when they are not actively driven. The ISL70040SEH provides reliable performance when exposed to total ionizing dose (TID) or heavy ions, and is immune to destructive single event effects (SEE) up to 16.5V with linear energy transfer (LET) of 86MeV•cm2/mg. The GaN FET driver uses a MIL-PRF-38535 Class V manufacturing flow and wafer-by-wafer radiation assurance testing.
Key Features of ISL70023SEH and ISL70024SEH GaN FETs 
•Very low RDSON at 5m٠(typ) - ISL70023SEH; and 45m٠(typ) - ISL70024SEH
•Ultra-low total gate charge 14nC (typ) - ISL70023SEH; and 2.5nC (typ) - ISL70024SEH
•Radiation hardness assurance (lot-by-lot): 
oHigh Dose Rate (HDR) (50-300rad(Si)/s):100krad(Si)
oLow Lose Rate (LDR) (0.01rad(Si)/s): 75krad(Si)
•SEE hardness at LET 86MeV•cm2/mg 
oISL70023SEH, VDS = 100V, VGS = 0V 
oISL70024SEH, VDS = 160V, VGS = 0V
•Full military temperature range operation 
oTA = -55ƃ to +125ƃ
oTJ = -55ƃ to +150ƃ
•EAR99 Versions available
Key Features of ISL70040SEH GaN FET Driver 
•Wide operating voltage range from 4.5V to 13.2V 
•Up to 14.7V logic inputs (regardless of VDD level), inverting and non-inverting inputs
•Full military temperature range operation 
oTA = -55ƃ to +125ƃ
oTJ = -55ƃ to +150ƃ
•Radiation hardness assurance (wafer-by-wafer): 
oHigh Dose Rate (HDR) (50-300rad(Si)/s):100krad(Si)
oLow Lose Rate (LDR) (0.01rad(Si)/s): 75krad(Si)
•SEE hardness at LET = 86MeV•cm2/mg: 
ono SEB/SEL, VDD = 16.5V 
ono static input SET, VDD = 4.5V and VDD = 13.2V
•Electrically screened to DLA SMD 5962-17233
•EAR99 Versions available
The ISL70023SEH 100V, 60A GaN FET or ISL70024SEH 200V, 7.5A GaN FET can be combined with the ISL70040SEH low side GaN FET driver and the ISL78845ASEH PWM controller to create launch vehicle and satellite switched mode power supplies. 
The rad-hard ISL70023SEH 100V, 60A GaN FET and ISL70024SEH 200V, 7.5A GaN FET are available now in hermetically sealed 4-lead 9.0mm x 4.7mm SMD packages. For more information on the ISL70023SEH, please visit: For more information on the ISL70024SEH, please visit:
The rad-hard ISL70040SEH low side GaN FET driver is available now in a hermetically sealed 8-lead 6mm x 6mm SMD package. For more information on the ISL70040SEH, please visit:

February 2018: Johanson Technology new MLCSoft Version for High-Q Capacitors

Johanson is proud to announce the development of a new version of the MLCSoft. This software displays the RF performance of our high-Q capacitors which helps our customers pick the right RF capacitor for their application. Since its still in beta version, share it only with a selected number of customers - design engineers whom you think could provide us valuable feedback.
The temporary link is:
The MLCSoft final version will soon be accessible from the JTI website. A downloadable version will be developed shortly after, and possibly an app for smart phones.
Your feedback is greatly appreciated to help improve the software!.


January 2018: Dean Technology, Inc.announced the addition of three new surface mount parts in the SL series

Dean Technology, Inc., today announced the addition of three more
parts to its SL series of surface mount high voltage diodes. The three new parts, the SLA20S, SLA25S, and
SLA30S bring the highest voltage rating seen in a surface mount diode with peak inverse voltage ratings of
20,000, 25,000 and 30,000 volts respectively.
Along with the news above, Dean Technology Inc. launched the parametric search feature for rectifiers.
You can access the advanced search from the center of the home page, or in the header of any page on the site. 
This search feature allows users to filter all of Dean Technology’s extensive rectification products by common technical specifications and package types allowing for very rapid identification of the correct product to meet
specific needs.
The advanced product search function is an extension of the custom-built product database that is the
heart of the Dean Technology website, and represents the next level of user experience for technical high
voltage customers. The same feature will be extended to DTI’s suppression and capacitor offerings in the
coming months, as the company continues to invest in providing industry leading tools to support their

December 2017: Gaia Announces new wide range Power Supplies for Railway Applications

The new trends in railway applications are definitively oriented to more portability, highest efficiency and easy to use solutions. To address those requirements that became inevitable, Gaïa-Converter has released an unequaled ultra-wide input range DC/DC converters concept to combine universality and flexibility. The MGDDI06R –MGDDI20R-MGDDI60R are 3 families of isolated dc/dc with a 12 to 160Vdc input range, and featuring flexible output channels.
The  technical article will describe the details of the new product family. Is also available the Gaia Railways Flyer.













November 2017: Microsemi acquires Phonon

 Microsemi announced the acquisition of Phonon, a Company focused on niche custom designs. This allows Microsemi to further expand its portfolio and Capabilities in RF, Microwave & Millimeter Wave.

Dimac Red will be the Point of Contact for information and sales.


Download the presentation of the new Capabilities here




October 2017: New resonator filter by Johanson Technology

Johanson Technology announces the release of U-NII Band high Rejection Coaxial Ceramic Resonator filter.



These high rejection ceramic coaxial resonator filters were specifically designed for applications that require splitting the unlicensed 5GHz spectrum into two or more bands that are very close together such as 802.11ax, UNII, U-NII Low, U-NII High, U-NII Upper, U-NII-2A, and U-NII-3. These passive surface mount (SMD/SMT) ceramic mono-block cavity filters offer excellent narrow band filtering performance and are able to reject 50dB in less than 160MHz. AEC-Q200 Automotive Qualification available if required

To download the datasheets, please go to:
For samples and pricing, go to:

September 2017 : Dimac welcomes you to Expo Ferroviaria and to Space Tech Expo Europe

 Dimac and Partners personnel will be present at the Expo Ferroviaria 2017 in Milan Rho Fiera (3 – 5 October) .

This Exhibition is one of the most relevant for Railways market:

see for more details. Our Booth will be 647.

Please contact us at or call us at +39 039 2494856 to schedule a meeting with our related Specialists.



Dimac and Partners personnel will be present at the Space Tech Expo Europe 2017 in Bremen (24 – 26 October) .

This Exhibition is one of the most relevant for Space market: see more details. Our Booth will be G30.

Please contact us at or call us at +39 039 2494856 to schedule a meeting with our related Specialists. 



Dimac Red s.p.a.     Engineering and sales: Via Giovanni XXIII, 25 - 20853 Biassono (MB) Tel: +39 039 2494856 - Fax: +39 039 491773 ; Legal and Social seat: Via F. Jarach, 6 - 20128 Milano
VAT Number (P.I.) 13137960152, n. iscriz. registro imprese di Milano e C.F. 08891370150, Share Capital (C.S.) € 50.000 i.v.
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