Radiation Tolerant to 30kRad (Si) by Sensitron Semiconductor

Featuring ratings of 30kRad(Si) for total dose and SEL, SEB and SEGR Immunity up to a LET level of 43MeV-cm2/mg, Sensitron’s latest products take advantage of state-of-the-art semiconductor technology to guarantee end of life (EOL) performance after long term exposure to radiation. The STF030J0041LAT-1 and SPF030N0101SE were designed for modern-day spacecraft constellations where redundant architecture allows for the selection of lower cost components. Designed with a higher level of integration than the individual components, these devices meet the fast pace of development demanded by satellite customers.

Radiation Tolerant DC Load Switch with Current Telemetry

Sensitron has designed a non-hermetic 40V, 30A radiation tolerant DC load switch module with 100mV/A output current telemetry and is radiation tolerant to 30kRad(Si). The baseless power chip on board package design features low inductance, superior thermal performance, and low conduction loss. In conclusion, the STF030J0041LAT-1 is a completely self-contained power module that can be used in various power applications.

Radiation Tolerant GaN FET with Integrated Gate Drive

Sensitron’s latest offering of GaN technology devices include a 100V, 30A GaN FETwith integrated gate drive. Ideal for LEO satellite applications, this lightweight (0.5oz max) device is radiation tolerant to 30kRad(Si) and with SEL, SEB and SEGR Immunity up to a LET level of 43MeV-cm2/mg. The high density SPF030N0101SE is available in a hermetic or non-hermetic package.